0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2 . 4 + 0 . 1 - 0 . 1 1 . 3 + 0 . 1 - 0 . 1 0 - 0 . 1 0 . 3 8 + 0 . 1 - 0 . 1 0 . 9 7 + 0 . 1 - 0 . 1 0 . 5 5 0 . 4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 1.gate 2.soruce 3.drain features ultra low on-resist ance n-cha nnel m osfet fast s w itc hing. absolute maxim um rating s t a = 2 5 paramet er sym bol rating unit dra in-sour ce v oltage v ds 20 v gate-to-sour ce voltage v gs 12 v con tinuous drain curent, @ v gs= 4.5v,t a =25 4.2 a con tinuous drain curent, @ v gs= 4.5v,t a =70 3.4 a pulsed drain current *1 i dm 33 a pow er dissi pation @ t a =25 p d 1.25 w thermal resis tance,j unction- to-am bient r ja 100 /w junct ion and storage tem pera ture rang e t j ,t stg -55 to +150 *1.reptitive rating:pulse w idth lim ited by m ax .junct ion tem pera ture. *2.i sd 0.93a,d i /d t 90a/ s, v dd v (br)dss ,t j 150 i d 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com s m d ty p e m o s f e t irl ml 25 02 s m d ty p e m o s f e t s m d ty p e m o s f e t smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification
s m d ty p e m o s f e t el ectrical characteristics t a = 2 5 parameter sym bol test c onditons min typ ma x unit dra in-source breakdow n voltage v dss i d = 250 a, v gs = 0v 20 v v ds = 16 v, v gs = 0v 1 v ds = 16 v, v gs = 0v, t j =125 25 gate-sour ce leada ge i gss v gs = 12v,v ds =0v 100 na gate threshold voltag e v gs(th) v ds = v gs , i d = 250 a 0.6 1.2 v i d = 4.2a, v gs = 4.5v 47 i d = 3.6a, v gs =2.5v 83 forw ard tra nsconductance g fs v ds = 10 v, i d = 4 a 5.8 s input c apacitance c i ss v ds = 15v, 745 output capacit ance c oss v gs = 0 v , 93 rev erse transfer capacit ance c rss f= 1mhz 67 total gate charg e q g 2.6 3.9 gate-sour ce charge q gs 0.41 0.62 gate-d rain ch arge q gd 1.1 1.7 turn- on delay ti m e t d(on ) 7.5 rise ti m e t r 10 turn- off delay ti m e t d(of f) r d = 10 ,r g = 6 54 fall ti m e t f 26 rev erse recove ry tim e t rr 24 ns rev erse recove ry charg e q rr 13 nc con tinuous s ource curren t i s 1.3 pulsed s ource curren t *1 i sm 33 diode forw ard v oltage v sd t j =25 ,v gs = 0 v , i s = 1.3 a *2 1.2 v *1 repe tit ive rating;pu lse width lim ited by m ax .junct ion tem pera ture. * 2 puls e w idth 300 s, duty cycle 2% a i dss gate-sour ce leakage c urr ent stati c drain -source on- re sis tance r ds(on) m t j =25 , i f =1.3 a, di / dt = 100 a/ s *2 ns pf a mo sfet sym bo l s how ing the integral re ver se p-n junction diode v ds =10v ,v gs = 5 v , i d = 4 a nc v dd = 10 v, i d = 1a, irl ml 25 02 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com s m d ty p e m o s f e t s m d ty p e m o s f e t smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification
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